Optimized Performance Characteristics of a 450 nm Semiconductor Laser by Varying Differential Gain

Abstract

In this work, the effects on the performance characteristics of a true-blue  3QW separate confinement heterostrcture edge-emitting laser are presented by varying differential gain. At the temperature of 300 K, the threshold current of the laser is . The peak material gain for the designed laser is obtained as  and further used for the analysis of the performance characteristics of the designed double-heterostructure laser for the variation of differential gain. From the performance analysis, the maximum allowable differential gain is  above which the steady state carrier density falls below the threshold level where lasing mechanism does not sustain. At this optimized value of differential gain, the maximum output power of the laser is , the maximum resonance frequency is  and the corresponding modulation bandwidth is  for the injection current of  at the temperature of 300 K.