Optimization of Power in SG-SOI Structure at 1550 nm for Nanophotonic Application

Авторы

  • Gopinath Palai Gandhi Institute for Technological Advancement image/svg+xml
  • S. K. Sahoo

Ключевые слова:

SG-SOI, PWE, power

Аннотация

Optical power of semiconductor grating silicon-on-insulator (SG-SOI) at 1550 nm is investigated in this paper. The power of SG-SOI structure is calculated using plane wave expansion (PWE) method. Simulation result reveals that optical power is more than 99.9% in all SG-SOI structure. Simulation result shows that suitable combinations of grating layers play vital role to obtain high optical power. 

Биография автора

  • Gopinath Palai, Gandhi Institute for Technological Advancement
    GITA,HOD

Опубликован

2013-08-29

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Раздел

Research Articles