Optimization of Power in SG-SOI Structure at 1550 nm for Nanophotonic Application

Autori

  • Gopinath Palai Gandhi Institute for Technological Advancement image/svg+xml
  • S. K. Sahoo

Parole chiave:

SG-SOI, PWE, power

Abstract

Optical power of semiconductor grating silicon-on-insulator (SG-SOI) at 1550 nm is investigated in this paper. The power of SG-SOI structure is calculated using plane wave expansion (PWE) method. Simulation result reveals that optical power is more than 99.9% in all SG-SOI structure. Simulation result shows that suitable combinations of grating layers play vital role to obtain high optical power. 

Biografia autore

  • Gopinath Palai, Gandhi Institute for Technological Advancement
    GITA,HOD

Pubblicato

2013-08-29

Fascicolo

Sezione

Research Articles