High Modulation Performance of a Designed InGaN Based 405 nm Multi-Quantum Well Violet Laser

Autori

  • Rinku Basak Department of Electrical and Electronic Engineering, American International University-Bangladesh (AIUB), Banani, Dhaka-1213, Bangladesh.

Parole chiave:

Output power, modulation bandwidth, MQW, violet laser

Abstract

In this work, the modulation performance characteristics of a designed 405 nm InGaN based multi-quantum well (MQW) Violet Laser are optimized and presented by varying injection current and differential gain. A maximum output power of 222.53 mW and a maximum resonance frequency of 18.79 GHz of the laser are obtained for 117 mA injection current, where, the differential gain is 4x10-16cm2. The differential quantum efficiency of the laser is obtained as 67.02% and the maximum modulation bandwidth is obtained as 25.1 GHz which enhances the modulation performance of the designed laser for applications in optical storage and medical diagnostics.

Biografia autore

  • Rinku Basak, Department of Electrical and Electronic Engineering, American International University-Bangladesh (AIUB), Banani, Dhaka-1213, Bangladesh.
    Head, Graduate Program, Assistant Professor, Dept. of EEE, American International University-Bangladesh (AIUB)

Dowloads

Pubblicato

2013-08-29

Fascicolo

V. 3 N. 2 (2013)

Sezione

Research Articles

Licenza

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