Improved Performance Characteristics of A Designed 450 nm True Blue Laser Using InGaN/AlGaN Materials

Autores/as

  • Rinku Basak Department of Electrical and Electronic Engineering, American International University-Bangladesh (AIUB), Banani, Dhaka-1213, Bangladesh.

Palabras clave:

Output power, resonance frequency, modulation bandwidth, true blue semiconductor laser

Resumen

In this work, the characteristics of a designed 450 nm true blue semiconductor laser are presented. Performance and optimizations of the designed laser are presented using InGaN/AlGaN active layer materials. A maximum optical output power of the laser is obtained as 147.48 mW for 93 mA injection current and 1 × 10−16 cm2 differential gain, where, the threshold current is 9.3 mA. The modal gain is calculated as 69.774 cm−1 and the differential quantum efficiency is obtained as 65.9%. A maximum resonance frequency of 7.55 GHz and a maximum modulation bandwidth of 10.5 GHz are obtained for the same values of injection current and differential gain. The performance of the laser is also analyzed by varying injection current and differential gain. A maximum output power of 206.65 mW of laser is obtained for 123 mA injection current and a differential gain of 4 × 10−16 cm2. For this, a maximum resonance frequency is obtained as 17.6 GHz and the corresponding modulation bandwidth is 23.75 GHz which enhances the performance of the designed laser for applications in data storage, optical discs and displays. 

Biografía del autor/a

  • Rinku Basak, Department of Electrical and Electronic Engineering, American International University-Bangladesh (AIUB), Banani, Dhaka-1213, Bangladesh.
    Head, Graduate Program, Assistant Professor, Dept. of EEE, American International University-Bangladesh (AIUB)

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Publicado

2013-04-23

Número

Vol. 3 Núm. 1 (2013)

Sección

Research Articles

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