Design and Performance Analysis of a 635 nm Ga0.5In0.5P/(Al0.7Ga0.3)0.5In0.5P Multiple Quantum Well Separate Confinement Heterostructure Red Laser Considering Thermal Limitations
Schlagwörter:
laser diode, double-heterostructure, MQW, SCH, EELAbstract
In this work, the performance characteristics of a GaInP - based 635 nm multiple quantum well (MQW) separate confinement heterostructure (SCH) Red laser has been obtained through computations. The material gain of Ga0.5In0.5P/(Al0.5Ga0.5)0.5In0.5P MQW edge emitting laser (EEL) has been theoretically obtained. The peak material gain obtained from the analysis has been used for analyzing the performance of the designed double-heterostructure laser. A maximum output power of 71.18 mW and a maximum modulation bandwidth of 13.85 GHz have been obtained for this designed laser at 64 mA injection current. Further, by increasing the injection current up to 94 mA, a maximum modulation bandwidth is obtained as 16.3 GHz at 300 K. Furthermore a performance analysis of the designed laser reveals that with an increase of temperature above 350 K, the steady state carrier density falls below the threshold level causing the laser to stop working.
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