High Modulation Performance of a Designed InGaN Based 405 nm Multi-Quantum Well Violet Laser

Forfattere

  • Rinku Basak Department of Electrical and Electronic Engineering, American International University-Bangladesh (AIUB), Banani, Dhaka-1213, Bangladesh.

Nøgleord:

Output power, modulation bandwidth, MQW, violet laser

Resumé

In this work, the modulation performance characteristics of a designed 405 nm InGaN based multi-quantum well (MQW) Violet Laser are optimized and presented by varying injection current and differential gain. A maximum output power of 222.53 mW and a maximum resonance frequency of 18.79 GHz of the laser are obtained for 117 mA injection current, where, the differential gain is 4x10-16cm2. The differential quantum efficiency of the laser is obtained as 67.02% and the maximum modulation bandwidth is obtained as 25.1 GHz which enhances the modulation performance of the designed laser for applications in optical storage and medical diagnostics.

Forfatterbiografi

  • Rinku Basak, Department of Electrical and Electronic Engineering, American International University-Bangladesh (AIUB), Banani, Dhaka-1213, Bangladesh.
    Head, Graduate Program, Assistant Professor, Dept. of EEE, American International University-Bangladesh (AIUB)

Publiceret

2013-08-29

Nummer

Sektion

Research Articles