Effect of Aluminium nitride Nucleation-layer on the Drain Characteristics of Nanoelectronic AlGaN/GaN Single-Heterojunction HEMTs
Аннотация
The simulation studies on the effect of aluminium nitride (AlN) nucleation layer in nanoelectronic single-heterojunction AlGaN/GaN high electron mobility transistors (HEMTs) is the novelty of this work. The variations in drain current with drain voltage are studied corresponding to different gate voltages. Also, the variations in drain current with gate voltage are studied corresponding to any considered drain voltage. This simulation work may be an useful prediction for the fabrication of AlGaN/GaN HEMTs to achieve the maximum drain current. Keywords: Nucleation layer; Nanoelectronic; Drain current; Drain voltage; Gate voltage
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