Opto-electrical and Structural Properties of CuxO Thin Films grown by R. F. Sputtering Method

Autor/innen

  • Jayanta Pal Dr. B. C. Roy Engineering College, Fuljhore, D Durgapur-713214, WB, India

Schlagwörter:

CuxO thin films, R.F. sputtering, Optical properties, Electrical properties, Structural properties.

Abstract

CuxO (0<x<1) thin films were deposited on glass substrate by r. f. sputtering method at different r. f. power in an atmosphere of O2 and Ar. The conditions for deposition of CuxO thin film were optimized by varying the r. f. power for the deposition to vary the energy band gap of the deposited film. Structural characterizations were performed by XRD and TEM studies. The films deposited on glass substrate have an electrical resistivity in the range 0.1 - 0.9 W-cm and a transmission less than 50% in the visible region. Electrical properties were studied in detail and the activation energies were found to depend on r.f. power of deposition. The optical band gap of the CuxO thin films were varies from 1.75 eV to 1.95 eV.Keywords:  CuxO thin films, R.F. sputtering, Optical properties, Electrical properties, Structural properties.

Autor/innen-Biografie

  • Jayanta Pal, Dr. B. C. Roy Engineering College, Fuljhore, D Durgapur-713214, WB, India
    Department: Physics,Assistant Professor

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Veröffentlicht

2011-05-03

Ausgabe

Bd. 2 Nr. 1 (2011)

Rubrik

Research Articles

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